Synthesis for robust synchronization of chaotic systems under output feedback control with multiple random delays

Synchronization under output feedback control with multiple random time delays is studied, using the paradigm in nonlinear physics—Chua’s circuit. Compared with other synchronization control methods, output feedback control with multiple random delay is superior for a realistic synchronization application to secure communications. Sufficient condition for global stability of delay-dependent synchronization is established based on the LMI technique. Numerical simulations fully support the analytical approach, in spite of the random delays.     

Liquid crystal lens with focus movable in focal plane

A liquid crystal lens with focus movable in the focal plane is reported. There are three electrodes in the cell. One electrode with a hole in the center is divided into four subelectrodes. The potential of each subelectrode is adjusted to produce a desired asymmetrical phase transformation resulting in off-axis movement of the focus. The potential of another electrode is adjusted to maintain the focus in the focal plane. Movements of the focus in three directions in the focal plane are demonstrated experimentally, and off-axis movement as large as approximately 800 μm is realized.     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

Photorefractive shearing interferometer

A novel method of obtaining shearing interferogram by slightly moving the crystal in a photorefractive interferometer is proposed. This method can measure the phase of an object itself instead of its diffraction field, and it is easy to realize continuously changeable shearing distance in any lateral direction and introduce carrier fringes at the same time. Both the theoretical analysis and experimental verification are given.     

用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

On the Exceptional Zeros of Rankin–Selberg L-Functions

The main objects of study in this article are two classes of Rankin–Selberg L-functions, namely L(s,f×g) and L(s, sym²(g)× sym²(g)), where f,g are newforms, holomorphic or of Maass type, on the upper half plane, and sym²(g) denotes the symmetric square lift of g to GL(3). We prove that in general, i.e., when these L-functions are not divisible by L-functions of quadratic characters (such divisibility happening rarely), they do not admit any LandauSiegel zeros. Such zeros, which are real and close to s=1, are highly mysterious and are not expected to occur. There are corollaries of our result, one of them being a strong lower bound for special value at s=1, which is of interest both geometrically and analytically. One also gets this way a good bound onthe norm of sym²(g).     

测量光折变非线性参量动态行为的一种新方法

在z扫描方法的基础上，提出了一种测量光折变非线性参量动态行为的新方法——时间扫描方法.理论和实验研究结果表明，这种新方法是精确、可行的. 关键词： 时间扫描方法 z扫描方法 非线性折射率 非线性吸收     

On the Strong Law of Large Numbers and the Law of the Logarithm for Weighted Sums of Independent Random Variables with Multidimensional Indices

Let (X, X ; ^d} be a field of independent identically distributed real random variables, 0 < p < 2, and {a _, ; ( , ) ^d × ^d, ≤ } a triangular array of real numbers, where ^d is the d-dimensional lattice. Under the minimal condition that sup _, |a _, | < ∞, we show that | |^{− 1/p} ∑ _≤ a _, X → 0 a.s. as | | → ∞ if and only if E(|X|^p(L|X|)^{d − 1}) < ∞ provided d ≥ 2. In the above, if 1 ≤ p < 2, the random variables are needed to be centered at the mean. By establishing a certain law of the logarithm, we show that the Law of the Iterated Logarithm fails for the weighted sums ∑ _≤ a _, X under the conditions that EX = 0, EX² < ∞, and E(X²(L|X|)^{d − 1}/L₂|X|) < ∞ for almost all bounded families {a _, ; ( , ) ^d × ^d, ≤ of numbers.     

光刻机投影物镜的像差原位检测新技术

提出了一种新的光刻机投影物镜像差原位检测(AMF)技术。详细分析了该技术利用特殊测试标记检测投影物镜球差、像散、彗差的基本原理,论述了该技术利用对准位置坐标计算像差引起的成像位置偏移量的方法。实验结果表明AMF技术可实现球差、彗差、像散等像差参量的精确测量。AMF技术考虑了光刻胶等工艺因素对像差引起的成像位置偏移量的影响,有效避免了目前基于硅片曝光方式的彗差原位检测技术对离焦量、像面倾斜等像质参量限制的依赖。     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.